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參數(shù)資料
| 型號： | MJD31 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor(General Purpose Amplifier and Low Speed Switching Applications)(NPN硅外延晶體管（通用放大器和低速開關(guān)作用）) |
| 中文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 444K |
| 代理商： | MJD31 |
2000 Fairchild Semiconductor International
Rev. A. February 2000
M
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
Units
: MJD31
: MJD31C
40
100
V
V
V
CEO
Collector-Emitter Voltage
: MJD31
: MJD31C
40
100
5
3
1
1
15
1.56
150
V
V
V
A
A
A
W
W
°
C
°
C
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
- 65 ~ 150
Test Condition
Min.
Max.
Units
: MJD31
: MJD31C
I
C
= 30mA, I
B
= 0
40
100
V
V
I
CEO
Collector Cut-off Current
: MJD31
: MJD31C
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 375mA
V
CE
= 4A, I
C
= 3A
V
CE
= 10V, I
C
= 500mA
50
50
μ
A
μ
A
I
CES
Collector Cut-off Current
: MJD31
: MJD31C
20
20
1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
25
10
50
1.2
1.8
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
V
3
MHz
MJD31/31C
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.ACK, “- I” Suffix)
Electrically Similar to Popular TIP31 and TIP31C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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