參數資料
型號: MJD243-1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS
中文描述: 4 A, 100 V, NPN, Si, POWER TRANSISTOR
文件頁數: 2/6頁
文件大?。?/td> 209K
代理商: MJD243-1
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0)
Collector Cutoff Current (VCB = 100 Vdc, IE = 0)
VCEO(sus)
ICBO
100
100
Vdc
nAdc
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage (1) (IC = 2 Adc, IB = 200 mAdc)
VBE(sat)
0.6
1.8
Vdc
Base–Emitter On Voltage (1) (IC = 500 mAdc, VCE = 1 Vdc)
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
MHz
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
50
pF
2%.
Figure 2. Active Region Maximum Safe
Operating Area
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
100
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
500
μ
s
dc
1
1 ms
50
20
10
5
2
1
100
μ
s
I
0.02
0.05
0.2
0.5
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 3. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
0.01
0.02
0.05
1
2
5
10
20
50
100
200
0.1
0.5
0.2
1
0.2
0.1
0.07
0.05
r
R
θ
JC(t) = r(t)
θ
JC
R
θ
JC = 10
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
R
0.5
D = 0.5
0.05
0.3
0.7
0.03
0.02
0 (SINGLE PULSE)
Figure 3. Thermal Response
0.1
0.02
0.01
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