- 您現(xiàn)在的位置：買賣IC網 > PDF目錄98015 > MJD13003T4 (ON SEMICONDUCTOR) 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJD13003T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 133K |
| 代理商： | MJD13003T4 |
MJD13003
http://onsemi.com
5
Figure 7. Inductive Switching Measurements
trv
TIME
IC
VCE
90% IB1
tsv
ICPK
Vclamp
90% Vclamp
90% IC
10% Vclamp
10%
ICPK 2% IC
IB
tfi
tti
tc
Table 2. Typical Inductive Switching Performance
IC
AMP
TC
_C
tsv
s
trv
s
tfi
s
tti
s
tc
s
0.5
25
1.3
0.23
0.30
0.35
0.30
05
100
1.6
0.26
0.30
0.40
0.36
1
25
1.5
0.10
0.14
0.05
0.16
100
1.7
0.13
0.26
0.06
0.29
1.5
25
1.8
0.07
0.10
0.05
0.16
5
100
3
0.08
0.22
0.08
0.28
NOTE: All Data Recorded in the Inductive Switching Circuit in
Table 1
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms
are
not
in
phase.
Therefore,
separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the equation:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ≈ tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100
_C.
相關PDF資料 |
PDF描述 |
|---|---|
| MJD18002D2-1 | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJD32-1 | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJE13005BU | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13005BD | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13005AN | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD148 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148T4 | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。