- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95947 > MJD122I (FAIRCHILD SEMICONDUCTOR CORP) 8 A, 100 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD122I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | MJD122I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD122
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
120
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
V
ICEO
Collector Cut-off Current
VCE = 50V, IB =0
10
A
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
10
A
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
*DC Current Gain
VCE = 4V, IC = 4A
VCE = 4V, VEB = 8A
1000
100
12K
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 4A, IB = 16mA
IC = 8A, IB = 80mA
2
4
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 8A, IB = 80mA
4.5
V
VBE(on)
*Base-Emitter ON Voltage
VCE = 4V, IC = 4A
2.8
V
Cob
Output Capacitance
VCB = 10V, IE = 0
f= 0.1MHz
200
pF
MJD122
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP122
Complement to MJD127
Equivalent Circuit
B
E
C
R1
R2
R18k
R20.12k
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD127-1 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD127-I | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD13005-1 | Si, NPN, RF POWER TRANSISTOR, TO-251 |
| MJD148-1 | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| MJD5731-1 | 1 A, 350 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD122T4 | 功能描述:達(dá)林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 功能描述:達(dá)林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
| MJD122T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252 |
| MJD122TF | 功能描述:達(dá)林頓晶體管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。