參數(shù)資料
型號: MJD122
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: Complementary Darlington Power Transistors
中文描述: 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁數(shù): 6/8頁
文件大?。?/td> 284K
代理商: MJD122
6
Motorola Bipolar Power Transistor Device Data
Figure 13. Darlington Schematic
BASE
EMITTER
COLLECTOR
8 k
120
PNP
BASE
EMITTER
COLLECTOR
8 k
120
NPN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD122_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:nullLow voltage power Darlington transistor
MJD122_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor
MJD122_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122-1 功能描述:達林頓晶體管 NPN PWR Darlington Int Anti Collector RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel