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參數(shù)資料
| 型號： | MJ802 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Power NPN Silicon Transistor |
| 中文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 136K |
| 代理商： | MJ802 |
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(1)
(IC = 200 mAdc, RBE = 100 Ohms)
Collector–Emitter Sustaining Voltage(1)
BVCER
100
90
—
—
Vdc
Vdc
(VCB = 100 Vdc, IE = 0)
—
1.0
Emitter–Base Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS(1)
IEBO
—
1.0
mAdc
DC Current Gain(1)
(IC = 7.5 Adc, VCE = 2.0 Vdc)
Base–Emitter “On” Voltage
hFE
25
—
100
1.3
—
Vdc
h
IC, COLLECTOR CURRENT (AMP)
TJ = 175
°
C
3.0
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
VBE(sat) @ IC/IB = 10
VCE = 2.0 V
25
°
C
– 55
°
C
TJ = 25
°
C
0.03
0.1
0.2 0.3
0.5
10
20 30
“
0.3
0.2
0.05
2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
2.0
1.8
1.4
1.6
1.2
0
0.03
1.0
0.8
0.6
0.4
0.2
1.0
0.1
0.2 0.3 0.5
10
20 30
0.05
2.03.0
5.0
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
I
50
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0
3.0
100
50
30
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25
°
C
PULSE DUTY CYCLE
≤
10%
TJ = 200
°
C
100
μ
s
1.0 ms
5.0 ms
dc
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power tempera-
ture derating must be observed for both steady state and
pulse power conditions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ802 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| MJ802_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER TRANSISTOR |
| MJ802_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High?Power NPN Silicon Transistor |
| MJ802G | 功能描述:兩極晶體管 - BJT 30A 90V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ80C31 | 制造商:Atmel Corporation 功能描述: |
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