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參數(shù)資料
| 型號： | MJ423 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 98K |
| 代理商： | MJ423 |
1
Motorola Bipolar Power Transistor Device Data
High-Voltage NPN Silicon
Transistor
. . . designed for medium–to–high voltage inverters, converters, regulators and
switching circuits.
High Voltage — VCEX = 400 Vdc
Gain Specified to 3.5 Amp
High Frequency Response to 2.5 MHz
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector–Emitter Voltage
VCEX
400
Vdc
Collector–Base Voltage
VCB
400
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
125
1.0
Watts
W/
_C
Operating Junction Temperature Range
TJ
– 65 to + 150
_C
Storage Temperature Range
Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.0
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage* (1)
(IC = 100 mAdc, IB = 0)
V(BR)CEO(sus)
325
—
Vdc
Collector Cutoff Current
(VCE = 400 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 400 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
ICEX
—
0.25
0.5
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
30
10
90
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB – 0.10 Adc)
VCE(sat)
—
0.8
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
—
1.25
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
—
MHz
(1) PW
v 300 s Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ423/D
Motorola, Inc. 1998
MJ423
10 AMPERE
POWER TRANSISTOR
NPN SILICON
400 VOLTS
125 WATTS
CASE 1–07
TO–204AA
(TO–3)
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