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參數(shù)資料
| 型號： | MJ413 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 325 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 12/59頁 |
| 文件大?。?/td> | 356K |
| 代理商： | MJ413 |
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MJ413 MJ423
3–420
Motorola Bipolar Power Transistor Device Data
I C
,COLLECT
OR
CURRENT
(AMPS)
I C
,COLLECT
OR
CURRENT
(mA)
I C
,COLLECT
OR
CURRENT
(AMP)
100
0.1
IC, COLLECTOR CURRENT (AMP)
1.0
70
1.0
TJ = 100° C
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
6.0
200
1.0
0.1
100
125
TC, CASE TEMPERATURE (°C)
100
50
75
25
0
Figure 1. Active–Region Safe–Operating Area
Figure 2. Power–Temperature Derating Curve
Figure 3. Sustaining Voltage Test Load Line
Figure 4. Sustaining Voltage Test Circuit
10
0.01
2.0
4.0
1000
0.2
0.3
0.5 0.7
2.0
3.0
5.0
VCE = 5.0 V
25
°C
0
20
40
60
80
120
180
200
100
s
1.0 ms
dc
0
500
VCEO(sus) IS ACCEPTABLE WHEN
VCE ≥ 325 V AT IC = 100 mA
400
200
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Current Gain
500
300
0
400
300
200
100
200
+
–
+
–
6.0 V
50 V
TO SCOPE
X
Y
1.0
300
Hg RELAY
50 mHy
10
60
20
40
400
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION AT TC = 25°C
(BASE–EMITTER DISSIPATION IS
PERCEPTIBLE ABOVE IC ≈ 5 AMP)
The Safe Operating Area Curves indi-
cate IC – VCE limits below which the de-
vice will not enter secondary breakdown.
Collector load lines for specific circuits
must fall within the applicable Safe Area to
avoid causing a catastrophic failure. To in-
sure operation below the maximum TJ,
power temperature derating must be ob-
served for both steady state and pulse
power conditions.
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
140
160
7.0
50
30
20
10
7.0
5.0
3.0
2.0
10
0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
1.0
7.0
0.1
0.5
1.5
2.0
VCE = 10 V
Figure 6. Transconductance
2.5
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
10
25
°C
TJ = 100° C
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