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參數(shù)資料
| 型號(hào)： | MJ413 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 AMPERE POWER TRANSISTORS NPN SILICON |
| 中文描述： | 10 A, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 108K |
| 代理商： | MJ413 |
MJ413
MJ423
MJ431
10 Amp
NPN Silicon
Power Transistors
125W
High Collector-Emitter Voltage V
CES
=400V
DC Current Gain Specified 3.5A
High Frequency Response to 2.5 MHz
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance: 1.0
:
/W junction to case
Characteristic
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEX
400
Vdc
Collector-Base Voltage
V
CB
400
Vdc
Emitter-Base Voltage
V
EB
5.0
Vdc
Collector Current-Continuous
I
C
10
Adc
Base Current
I
B
2.0
Adc
Total Device Dissipation @T
C
=25
:
Derate above 25
:
P
D
125
1.0
Watts
W/
:
TO-3
A
N
DIMENSIONS
INCHES
MIN
1.550
-----
.250
.038
0.55
.430
.215
.440
.665
-----
.151
1.187
.131
MM
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
MAX
REF
1.050
.335
.043
0.70
BSC
BSC
.480
BSC
.830
.165
BSC
.188
MIN
39.37
-----
6.35
0.97
1.40
10.92
5.46
11.18
16.89
-----
3.84
30.15
3.33
MAX
NOTE
REF
26.67
8.51
1.09
1.77
BSC
BSC
12.19
BSC
21.08
4.19
BSC
4.77
E
D
C
K
PIN 1.
PIN 2.
CASE.
BASE
EMITTER
COLLECTOR
Power Dissipation (W) -
Versus
- Temperature
°
C
Figure 1 - Power Derating Curve
Temperature
°
C
0
50
100
150
P
D
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
H
V
U
L
G
B
Q
1
2
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