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參數(shù)資料
| 型號： | MJ3281A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS |
| 中文描述： | 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | MJ3281A |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
200
—
—
Vdc
Emitter–Base Voltage
(IE = 100
μ
Adc, IC = 0)
VEBO
7
—
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
—
50
μ
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
5
μ
Adc
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
IEBO
—
—
25
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
4
1
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
60
60
60
60
60
45
12
125
—
—
—
115
—
35
175
175
175
175
175
—
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
—
—
3
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
—
30
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
Cob
—
—
600
pF
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