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參數(shù)資料
| 型號： | MJ16022 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | 30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | CASE 197A-05, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 168K |
| 代理商： | MJ16022 |
1
Motorola Bipolar Power Transistor Device Data
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16022 is a selected high–gain version
of the MJ16020 for applications where drive current is limited.
Features:
Fast Switching Times:
30 ns (Typ) Inductive Fall Time
50 ns (Typ) Inductive Crossover Time
800 ns (Typ) Inductive Storage Time
100 C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Typical Applications:
Switching Regulators
Inverters
Solenoids and Relay Drivers
Deflection Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Collector–Emitter Sustaining Voltage
Symbol
VCEO
VCEV
VEB
IC
Max
450
Unit
Vdc
Collector–Emitter Breakdown Voltage
850
Vdc
Emitter–Base Voltage
6
Vdc
Collector Current — Continuous
30
Adc
Derate above 25 C
1.42
W/ C
Operating and Storage Temperature
TJ, Tstg
–65 to 200
C
Characteristic
Thermal Resistance — Junction to Case
Symbol
R
Max
0.7
Unit
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″
from Case for 5 Seconds
275
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16020/D
NPN SILICON POWER
TRANSISTOR
30 AMPERES
450 VOLTS
CASE 197A–05
TO–204AE
REV 7
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