參數(shù)資料
型號(hào): MJ15020
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS
中文描述: 4 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 1/4頁
文件大?。?/td> 135K
代理商: MJ15020
1
Motorola Bipolar Power Transistor Device Data
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. . . designed for use as high frequency drivers in Audio Amplifiers.
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested
Excellent Frequency Response — fT = 20 MHz min.
Rating
Symbol
Unit
Derate above 25 C
0.86
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
R
θ
JC
Unit
C/W
1.17
0
TC, CASE TEMPERATURE (
°
C)
0
25
75
80
40
100
125
P
175
200
60
20
SECOND BREAKDOWN
DERATING
THERMAL DERATING
50
100
150
Figure 1. Power Derating
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15018/D
*Motorola Preferred Device
4.0 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ15020G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors
MJ15021 制造商:Motorola Inc 功能描述:
MJ15021G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors
MJ15022 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15022_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors