參數(shù)資料
型號(hào): MJ11021
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
中文描述: 15 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 235K
代理商: MJ11021
4
Motorola Bipolar Power Transistor Device Data
V
V
COLLECTOR CURRENT (AMPS)
4.0
0.1
3.0
2.5
1.5
3.5
2.0
1.0
0.5
0.7 1.0
2.0 3.0
5.0
10
7.0
50
30
20
70
4.0
3.0
2.5
1.5
3.5
2.0
1.0
0.5
h
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
h
Figure 6. DC Current Gain
Figure 7. Collector Saturation Region
IB, BASE CURRENT (mA)
7000
5000
10,000
0.3
0.5
1.0
20
0.2
3000
2000
1000
700
500
300
200
0.7
COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
VBE(sat) @ IC/IB = 100
VCE = 5.0 Vdc
100
3.0
5.0
10
7.0
15
2.0
20,000
10,000
7000
5000
30,000
2000
1000
700
500
300
TJ = 25
°
C
TJ = 150
°
C
TJ = – 55
°
C
3000
V
4.0
0.5
IB, BASE CURRENT (mA)
500
3.0
2.5
1.5
3.5
2.0
1.0
0.5
300
200
0.7 1.0
2.0 3.0
5.0
10
7.0
50
30
20
100
70
IC = 5.0 A
TJ = 25
°
C
IC = 15 A
0.2 0.3 0.5
TJ = 25
°
C
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
V
PNP
NPN
PNP
NPN
PNP
NPN
0.3
0.5
1.0
20
0.2
0.7
3.0
5.0
10
7.0
15
2.0
VCE = 5.0 Vdc
TJ = 150
°
C
TJ = 25
°
C
TJ = – 55
°
C
IC = 10 A
4.0
0.5
500
3.0
2.5
1.5
3.5
2.0
1.0
0.5
300
200
0.7 1.0
2.0 3.0
5.0
10
7.0
50
30
20
100
70
TJ = 25
°
C
IC = 5.0 A
IC = 15 A
IC = 10 A
0.1
0.7 1.0
2.0 3.0
5.0
10
7.0
50
30
20
0.2 0.3 0.5
TJ = 25
°
C
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
相關(guān)PDF資料
PDF描述
MJ11022 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
MJ11017 POWER TRANSISTORS(15A,150-250V,175W)
MJ11021 POWER TRANSISTORS(15A,150-250V,175W)
MJ11022 POWER TRANSISTORS(15A,150-250V,175W)
MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11021_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors
MJ11021_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors
MJ11021G 功能描述:達(dá)林頓晶體管 30A 250V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11021G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR
MJ11022 功能描述:TRANS DARL NPN 15A 250V TO-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR