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參數(shù)資料
| 型號： | MJ10012 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS |
| 中文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MJ10012 |
3
Motorola Bipolar Power Transistor Device Data
,
I
μ
V
V
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005
0.01
0.02
0.05
1
2
2.5
2
1.5
1
TJ = 25
°
C
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Cutoff Region
103
102
101
100
10–1
IC = ICES
25
°
C
REVERSE
–0.2
FORWARD
Figure 5. Collector–Emitter Saturation Voltage
2.2
IC, COLLECTOR CURRENT (AMP)
0.20.1
1.8
1.4
1
0.6
Figure 6. Base–Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
2.4
2
1.6
1.2
IC = 0.5 A
10 A
3
IC/IB = 5
– 30
°
C
25
°
C
150
°
C
25
°
C
TJ = – 30
°
C
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 6 V
0.1
0.3
0.5
0.7
1
2
5
7
3
10
VCE = 250 V
TJ = 150
°
C
75
°
C
0
+0.2
+0.4
+0.8
+0.6
6
0.2
0.1
0.5
TJ = 150
°
C
V
V
1
2
0.3
5
7
10
0.2
3
0.7
0.5
0.2
10
7
5
Figure 7. Turn–Off Switching Time
IC, COLLECTOR CURRENT (AMP)
3
2
1
0.5
0.1
0.5 0.7
TJ = 25
°
C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
t
μ
tf
ts
0.2
0.3
1
2
5
7
3
10
20
0.7
2000
0.1
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
2
3
5
10
700
500
100
70
50
30
h
TJ = 150
°
C
25
°
C
30
°
C
VCE = 3 Vdc
VCE = 6 Vdc
200
300
1000
7
25
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| MJ10012 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10012 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJH10012 | POWER TRANSISTORS DARLINGTON NPN SILICON |
| MJ10012 | POWER TRANSISTORS DARLINGTON NPN SILICON |
| MJ10012 | POWER TRANSISTORS(10A,400V,175W) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10012 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR |
| MJ10013 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W) |
| MJ10014 | 制造商:undefined 功能描述: |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
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