參數(shù)資料
型號(hào)： MJ10000
廠商： MOSPEC SEMICONDUCTOR CORP.
英文描述： POWER TRANSISTORS(20A,350-400V,175W)
中文描述： 功率晶體管（20A條,350 -為400V，175W的）
文件頁數(shù)： 3/8頁
文件大?。?/td> 212K
代理商： MJ10000
3
Motorola Bipolar Power Transistor Device Data
V
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
50.2 0.3
1
2
3
100
70
50
Figure 2. Collector Saturation Region
V
3
IB, BASE CURRENT (ANP)
1
0.02 0.03
0.1
0.2
0.5
1
2
2.6
2.2
1.8
1.4
IC = 5 A
TJ = 25
°
C
10 A
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
104
103
102
101
500
h
TJ = 150
°
C
VCE = 5 V
,
I
100
0
+0.2
–0.2
VCE = 250 V
TJ = 125
°
C
100
°
C
25
°
C
30
20
10
7
0.5 0.7
5
7
20
Figure 3. Collector Emitter Saturation Voltages
2.4
0.2
IC, COLLECTOR CURRENT (AMPS)
0.4
0.3
0.5
0.7
1
2
5
20
2
1.6
1.2
0.8
IC/IB = 25
TJ = – 55
°
C
7
3
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.80.2 0.3
0.5
0.7
2.4
2
1.6
1.2
0.4
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50
1
2
20
60
10
0.6
200
70
TJ = 25
°
C
Cob
1000
500
100
100
200
400
25
°
C
–55
°
C
200
300
10
15 A
20 A
0.05
0.7
0.3
0.07
V
10
25
°
C
150
°
C
2
5
20
7
3
10
1
25
°
C
150
°
C
25
°
C
TJ = 55
°
C
VBE(sat) @ IC/IB = 25
VBE(on) @ VCE = 3 V
75
°
C
μ
10–1
+0.4
+0.8
+0.6
4
6
40
700
300
C
DC CHARACTERISTICS
相關(guān)PDF資料
PDF描述
MJ10005 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
MJ10005 SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
MJ10005 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
MJ10005 NPN SILICON POWER DARLINGTON TRANSISTORS
MJ10005 POWER TRANSISTORS(20A,350-400V,175W)
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