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參數(shù)資料
| 型號(hào)： | MJ10000 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 開(kāi)關(guān)模式電源系列NPN硅達(dá)林頓晶體管 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | MJ10000 |
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
(continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
tc. However, at lower test currents this
3
2
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.7
0.1
3
20
0.2
1
5
td
tr
2
7
1
0.3
0.5
2
Figure 9. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.7
0.2
0.1
VBF(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25
°
C
tf
ts
0.3
0.5
VBE(off) = 5 V
VCC = 250 V
IC/IB = 25
TJ = 25
°
C
10
3
20
1
5
2
7
10
1
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC (t) = r(t) R
θ
JC
R
θ
JC = 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r
(
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ10000 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJ10000 | POWER TRANSISTORS(20A,350-400V,175W) |
| MJ10005 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS |
| MJ10005 | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
| MJ10005 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10001 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes |
| MJ10002 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10003 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10004 | 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3 |
| MJ10004 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
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