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參數(shù)資料
| 型號： | MIP516 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Silicon MOSFET type integrated circuit |
| 中文描述： | BUF OR INV BASED PRPHL DRVR, PDSO6 |
| 封裝： | ROHS COMPLIANT, MINI6-G1, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 71K |
| 代理商： | MIP516 |
Intelligent Power Devices (IPDs)
MIP516
Silicon MOSFET type integrated circuit
1
Publication date: August 2003
SLB00059AED
■
Features
Built-in five protection functions. (over-current, over-voltage, load-
short-circuit, over heat, ESD)
Driving directly from CMOS (microcomputer) is possible.
It is exchangeable easily from a bipolar transistor and MOSFET
The miniaturized package equipped with three terminals was
adapted.
■
Applications
Lamp-Solenoid, driver
Motor driver
■
Absolute Maximum Ratings
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DS
I
O
0.5 to
+
45
V
Output current
1.0
A
Input voltage
V
IN
0.5 to
+
6.0
±
2
V
Input current
I
IN
E
CLP
P
D1
mA
Drain clamp energy endurance
*1
Power dissipation 1
*2
Power dissipation 2
*3
13
mJ
0.2
W
P
D2
0.8
W
Operating ambient temperature
T
opr
T
ch
40 to
+
85
°
C
°
C
°
C
Channel temperature
150
Storage temperature
T
stg
55 to
+
150
■
Block Diagram
2.90
1.9
±
0.1
0.95
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
0.50
+0.10
0.95
6
5
4
1
3
2
+0.20
5
°
10
°
Marking Symbol: MB
Unit : mm
1 : Drain
2 : Drain
3 : Source
4 : In
5 : Drain
6 : Drain
Mini6-G1 Package
Note)*1: L
=
10 mH, I
L
=
1.61 A, V
DD
=
20 V, 1 pulse, T
C
=
25
°
C
*2: Single unit
*3: Mounting on the PCB (40 mm
2
, thickness 1.7mm glass epoxy
substrate) (T
a
=
25
°
C)
In
Drain
Source
Load short-circuit
protection
Over-current
protection
Gate cutoff
circuit
Over-voltage
protection
Over-heat
protection
ESD protection
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