參數(shù)資料
型號(hào): MII150-12A4
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: IGBT Modules Short Circuit SOA Capability Square RBSOA
中文描述: 180 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 120K
代理商: MII150-12A4
2000 IXYS All rights reserved
4 - 4
Fig. 7
Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
0
50
100
150
I
C
200
0
20
40
60
0
40
80
120
0
50
100
150
200
0
10
20
30
0
200
400
600
0.00001
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
0
8
16
24
32
40
48
56
0
5
10
15
20
0
400
800
1200
1600
0
8
16
24
32
40
48
56
0
10
20
30
40
50
mJ
0
50
100
150
200
250
ns
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 10
W
T
J
= 125
°
C
150-12
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125
°
C
0
200
400
600
800
1000 1200
V
CE
0
40
80
120
160
200
240
A
R
G
= 10
W
T
J
= 125
°
C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 10
W
T
J
= 125
°
C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125
°
C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
t
s
E
on
mJ
E
off
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
MII 150-12 A4
MID 150-12 A4
MDI 150-12 A4
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