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參數資料
| 型號： | MIG300Q101H |
| 廠商： | Toshiba Corporation |
| 英文描述： | Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 智能功率模塊IGBT的硅?頻道 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 182K |
| 代理商： | MIG300Q101H |
MIG300Q101H
2001-05-29
2
Maximum Ratings
(T
j
= 25°C)
Stage
Characteristic
Condition
Symbol
Ratings
Unit
Supply voltage
P
N power terminal
V
CC
900
V
Collector
emitter voltage
―
V
CES
1200
V
Collector current
Tc = 25°C, DC
I
C
300
A
Forward current
Tc = 25°C, DC
I
F
300
A
Collector power dissipation
Tc = 25°C
P
C
1600
W
Inverter
Junction temperature
―
T
j
150
°C
Control supply voltage
V
D
GND terminal
V
D
20
V
Input voltage
IN
GND terminal
V
IN
20
V
Fault output voltage
FO
GND (L) terminal
V
FO
20
V
Control
Fault output current
FO sink current
I
FO
14
mA
Operating temperature
―
T
C
20~+100
°C
Storage temperature range
―
T
stg
40~+125
°C
Isolation voltage
AC 1 minute,
V
ISO
2500
V
Module
Screw torque
M6
―
3
N·m
Electrical Characteristics
(T
j
= 25°C)
a. Inverter Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Ma.
Unit
T
j
= 25°C
―
―
2
Collector cut
off current
I
CEX
V
CE
= 1200V
T
j
= 125°C
―
―
40
mA
T
j
= 25°C
―
2.7
2.5
Collector
emitter saturation voltage
V
CE
(sat)
V
D
= 15V, I
C
= 300A
V
IN
= 3V
→
0V
T
j
= 125°C
―
2.6
―
V
Forward voltage
V
F
I
F
= 300A
―
2.0
3.0
V
t
on
0.8
1.5
2.2
t
c (on)
―
0.5
1.0
t
rr
―
0.2
0.3
t
off
―
3.3
3.8
Switching time
t
c (off)
V
= 600V, I
C
= 300A
V
D
= 15V, V
IN
= 3V
Inductive load
0V
(Note 1)
―
0.4
0.8
μs
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