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參數(shù)資料
| 型號(hào)： | MIC5021BM |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Replaced by PTN78060W : |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MIC5021BM |
MIC5021
Micrel
5-174
October 1998
Logic-Level MOSFET Precautions
Logic-level MOSFETs have lower maximum gate-to-source
voltage ratings (typically
±
10V) than standard MOSFETs
(typically
±
20V). When an external MOSFET is turned on, the
doubling effect of the boost capacitor can cause the gate-to-
source voltage to momentarily exceed 10V. Internal zener
diodes clamp this voltage to 16V maximum which is too high
for logic-level MOSFETs. To protect logic-level MOSFETs,
connect a zener diode (5V
≤
V
Zener
<10V) from gate to source.
Overcurrent Limiting
A 50mV comparator is provided for current sensing. The low
level trip point minimizes I
2
R losses when a power resistor is
used for current sensing.
The adjustable retry feature can be used to handle loads with
high initial currents, such as lamps or heating elements, and
can be adjusted from the C
T
connection.
C
T
to ground maintains gate drive shutdown following an
overcurrent condition.
C
T
open, or a capacitor to ground, causes automatic retry.
The default duty cycle (C
T
open) is approximately 20%. Refer
to the electrical characteristics when selecting a capacitor for
reduced duty cycle.
C
T
through a pull-up resistor to V
DD
increases the duty cycle.
Increasing the duty cycle increases the power dissipation in
the oad and MOSFET under a “fault” condition. Circuits may
become unstable at a duty cycle of about 75% or higher,
depending on conditions. Caution: The MIC5021 may be
damaged if the voltage applied to C
T
exceeds the absolute
maximum voltage rating.
Boost Capacitor Selection
The boost capacitor value will vary depending on the supply
voltage range.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
+12V to +20V
MIC5021
1
2
3
4
8
7
6
5
10μF
0.01
μF
L
Figure 1. 12V to 20V Configuration
A 0.01
μ
F boost capacitor is recommended for best perfor-
mance in the 12V to 20V range. Refer to figure 1. Larger
capacitors may damage the MIC5021.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
+12V to +36V
MIC5021
1
2
3
4
8
7
6
5
10μF
2.7
L
Figure 2. 12V to 36V Configuration
If the full 12V to 36V voltage range is required, the boost
capacitor value must be reduced to 2.7nF. Refer to Figure 2.
The recommended configuration for the 20V to 36V range is
to place the capacitor is placed between V
DD
and V
BOOST
as
shown in Figure 3.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
+12V to +36V
MIC5021
1
2
3
4
8
7
6
5
10μF
L
0.1
μF
Figure 3. Preferred 20V to 36V Configuration
Do not use both boost capacitor between V
BOOST
and the
MOSFET source and V
BOOST
and V
DD
at the same time.
Current Sense Resistors
Lead length can be significant when using low value (< 1
)
resistors for current sensing. Errors caused by lead length
can be avoided by using four-teminal current sensing resis-
tors. Four-terminal resistors are available from several
manufacturers.
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| MIC50398 | Replaced by PTN78060W,PTN78060H : |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5021BM TR | 功能描述:IC DRIVER MOSFET HISIDE HS 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5021BN | 功能描述:IC DRIVER MOSFET HI SIDE HS 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5021YM | 功能描述:功率驅(qū)動(dòng)器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5021YM TR | 功能描述:功率驅(qū)動(dòng)器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5021YM | 制造商:Micrel Inc 功能描述:Temperature Sensor IC 制造商:Micrel Inc 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
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