參數(shù)資料
型號: MIC5020BM
廠商: MICREL INC
元件分類: 功率晶體管
英文描述: Replaced by PTN78060W :
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: SOIC-8
文件頁數(shù): 7/7頁
文件大?。?/td> 99K
代理商: MIC5020BM
MIC5020
Micrel
5-168
October 1998
Faster MOSFET Switching
The MIC5020’s
GATE
current can be multiplied using a pair
of bipolar transistors to permit faster charging and discharg-
ing of the external MOSFET’s gate.
V
DD
Input
Fault
C
T
Gate
Sense
Sense
+
Gnd
150kHz max.
N-Channel
Power MOSFET
(IRF540)
+40V max.
MIC5020
1
2
3
4
8
7
6
5
10μF
L
+11V to +50V
2N3904
2N3906
Figure 4. Faster MOSFET Switching Circuit
NPN and PNP transistors are used to respectively charge
and discharge the MOSFET gate. The MIC5020 gate current
is multiplied by the transistor
β
.
The switched circuit voltage can be increased above 40V by
selecting transistors with higher ratings.
Remote Overcurrent Limiting Reset
In circuit breaker applications where the MIC5020 maintains
an off condition after an overcurrent condition is sensed, the
C
T
pin can be used to reset the MIC5020.
V
DD
Input
Fault
C
T
Gate
Sense
Sense
+
Gnd
TTL input
N-Channel
Power MOSFET
V+
MIC5020
1
2
3
4
8
7
6
5
10μF
L
R
SENSE
+11V to +50V
74HC04
(example)
Q1
2N3904
10k to
100k
Retry (H)
Maintained (L)
Figure 5. Remote Control Circuit
Switching Q1 on pulls C
T
low which keeps the MIC5020
GATE
output off when an overcurrent is sensed. Switching Q1 off
causes C
T
to appear open. The MIC5020 retries in about
20
μ
s and continues to retry until the overcurrent condition is
removed.
For test purposes, a 680
load resistor and 3
sense resistor
will produce an overcurrent condition when the load’s supply
(V+) is approximately 12V or greater.
Low-Temperature Operation
As the temperature of the MIC5020AJB (extended tempera-
ture range version—no longer available) approaches –55
°
C,
the driver’s off-state, gate-output offset from ground in-
creases. If the operating environment of the MIC5020AJB
includes low temperatures (–40
°
C to –55
°
C), add an external
2.2M
resistor as shown in Figures 6a or 6b. This assures
that the driver’s gate-to-source voltage is far below the
external MOSFET’s gate threshold voltage, forcing the
MOSFET fully off.
V
DD
Input
Fault
C
T
Gate
Sense
Sense
Gnd
V+
MIC5020
1
2
3
4
8
7
6
5
10μF
L
R
SENSE
+11V to +50V
2.2M
Figure 6a. Gate-to-Source Pull Down
The gate-to-source configuration (refer to Figure 6a) is ap-
propriate for resistive and inductive loads. This also causes
the smallest decrease in gate output voltage.
V
DD
Input
Fault
C
T
Gate
Sense
Sense
Gnd
V+
MIC5020
1
2
3
4
8
7
6
5
10μF
L
R
SENSE
+11V to +50V
2.2M
Figure 6b. Gate-to-Ground Pull Down
The gate-to-ground configuration (refer to Figure 6b) is
appropriate for resistive, inductive, or capacitive loads. This
configuration will decrease the gate output voltage slightly
more than the circuit shown in Figure 6a.
相關PDF資料
PDF描述
MIC5020BN Replaced by PTN78060W :
MIC5021 Replaced by PTN78060W :
MIC5021BM Replaced by PTN78060W :
MIC5021BN Replaced by PTN78060W :
MIC5031 High-Speed High-Side MOSFET Driver(高速高邊MOS場效應管驅動器)
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