參數(shù)資料
型號： MIC5014BM
廠商： MICREL INC
元件分類： 功率晶體管
英文描述： FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述： BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝： SOIC-8
文件頁數(shù)： 3/12頁
文件大?。?/td> 76K
代理商： MIC5014BM
MIC5014/5015
Micrel
1997
3
MIC5014/5015
Absolute Maximum Ratings
(Notes 1,2)
Operating Ratings
(Notes 1,2)
Electrical Characteristics
(Note 3) T
A
=
–
55
°
C to +125
°
C unless otherwise specified
Parameter
Supply Current
V
+
= 30V
Supply Voltage ...............................................
–
20V to 60V
Input Voltage .....................................................
–
20V to V
+
Source Voltage..................................................
–
20V to V
+
Source Current..........................................................50mA
Gate Voltage ..................................................
–
20V to 50V
Junction Temperature .............................................. 150
°
C
θ
JA
(Plastic DIP)..................................................... 160
°
C/W
θ
(SOIC) ............................................................. 170
°
C/W
Ambient Temperature: B version ................
–
40
°
C to +85
°
C
Ambient Temperature: A version ..............+55
°
C to +125
°
C
Storage Temperature ................................
–
65
°
C to +150
°
C
Lead Temperature......................................................260
°
C
(max soldering time: 10 seconds)
Supply Voltage (V
+
) ......................................... 2.75V to 30V
Conditions
V
IN
De-Asserted (Note 5)
V
IN
Asserted (Note 5)
V
IN
De-Asserted
V
IN
Asserted
V
IN
De-Asserted
V
IN
Asserted
Digital Low Level
Digital High Level
V
IN
Low
V
IN
High
V
IN
Low
V
IN
High
Min
Typ
10
5.0
10
60
10
25
Max
25
10
25
100
25
35
0.8
Units
μ
A
mA
μ
A
V
+
= 5V
V
+
= 3V
μ
A
Logic Input Voltage Threshold
V
IN
Logic Input Current
MIC5014 (non-inverting)
Logic Input Current
MIC5015 (inverting)
Input Capacitance
Gate Enhancement
V
GATE
–
V
SUPPLY
Zener Clamp
V
GATE
–
V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
3.0V
≤
V
+
≤
30V
T
A
= 25
°
C
3.0V
≤
V
+
≤
30V
2.0
–
2.0
V
0
μ
A
1.0
–
1.0
–
1.0
5.0
2.0
3.0V
≤
V
+
≤
30V
–
2.0
μ
A
2.0
pF
V
3.0V
≤
V
+
≤
30V
V
IN
Asserted
4.0
17
8.0V
≤
V
+
≤
30V
V
IN
Asserted
13
15
17
V
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
V
IN
switched on, measure
time for V
GATE
to reach V
+
+ 4V
As above, measure time for
V
GATE
to reach V
+
+ 4V
V
IN
switched off, measure
time for V
GATE
to reach 1V
As above, measure time for
V
GATE
to reach 1V
2.5
8.0
ms
90
140
μ
s
Gate Turn-off Time, t
OFF
(Note 4)
6.0
30
μ
s
6.0
30
μ
s
Overvoltage Shutdown
Threshold
35
37
41
V
Note 1: Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified
Operating Ratings
.
Note 2:
The MIC5014/5015 is ESD sensitive.
Note 3:
Minimum and maximum
Electrical Characteristics
are 100% tested at T
A
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Note 4:
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster
—
see
Applications Information. Maximum value of switching time seen at 125
°
C, unit operated at room temperature will reflect the typical value
shown.
Note 5:
“
Asserted
”
refers to a logic high on the MIC5014 and a logic low on the MIC5015.
相關(guān)PDF資料
PDF描述
MIC5014BN FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
MIC5015BM Low-Cost High- or Low-Side MOSFET Driver Final Information
MIC5015BN Low-Cost High- or Low-Side MOSFET Driver Final Information
MIC5014 Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動(dòng)器)
MIC5015 Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動(dòng)器)
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