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參數(shù)資料
| 型號： | MIC5013BM |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MIC5013BM |
July 2000
9
MIC5013
MIC5013
Applications Information
(Continued)
Micrel
includes bond resistances. A Kelvin-connected ohmmeter
(using TAB and SOURCE for forcing, and SENSE and
KELVIN for sensing) is the best method of evaluating
“
R.
”
Alternatively,
“
R
”
can be estimated for large MOSFETs
(R
DS(ON)
≤
100m
) by simply halving the stated R
DS(ON)
, or
by subtracting 20 to 50m
from the stated R
DS(ON)
for
smaller MOSFETs.
High-Side Driver with Current Sensing MOSFET
(Figure
5). The design starts by determining the value of
“
S
”
and
“
R
”
for the MOSFET (use the guidelines described for the low-
side version). Let V
TRIP
= 100mV, and calculate R
S
for a
desired trip current. Next calculate R
TH
and R1. The trip
point is somewhat reduced when the output is at ground as
the voltage drop across R1 is zero. No clamping is required
for inductive loads, but may be added to reduce power
dissipation in the MOSFET.
Typical Applications
Start-up into a Dead Short. If the MIC5013 attempts to turn
on a MOSFET when the load is shorted, a very high current
flows. The over-current shutdown will protect the MOSFET,
but only after a time delay of 5 to 10
μ
s. The MOSFET must
be capable of handling the overload; consult the device
’
s
SOA curve. If a short circuit causes the MOSFET to exceed
its 10
μ
s SOA, a small inductance in series with the source
can help limit di/dt to control the peak current during the 5
to 10
μ
s delay.
When testing short-circuit behavior, use a current probe
rated for both the peak current and the high di/dt.
The over-current shutdown delay varies with comparator
overdrive, owing to noise filtering in the comparator. A delay
of up to 100
μ
s can be observed at the threshold of shut-
down. A 20% overdrive reduces the delay to near minimum.
Incandescent Lamps
. The cold filament of an incandes-
cent lamp exhibits less than one-tenth as much resistance
as when the filament is hot. The initial turn-on current of a
#6014 lamp is about 70A, tapering to 4.4A after a few
hundred milliseconds. It is unwise to set the over-current trip
point to 70A to accommodate such a load. A
“
resistive
”
short
that draws less than 70A could destroy the MOSFET by
allowing sustained, excessive dissipation. If the over-cur-
rent trip point is set to less than 70A, the MIC5013 will not
start a cold filament. The solution is to start the lamp with a
high trip point, but reduce this to a reasonable value after the
lamp is hot.
The MIC5013 over-current shutdown circuit is designed to
handle this situation by varying the trip point with time (see
Figure 5). R
TH1
functions in the conventional manner,
providing a current limit of approximately twice that required
by the lamp. R
TH2
acts to increase the current limit at turn-
on to approximately 10 times the steady-state lamp current.
The high initial trip point decays away according to a 20ms
time constant contributed by C
TH
. R
TH2
could be eliminated
with C
TH
working against the internal 1k
resistor, but this
results in a very high over-current threshold. As a rule of
thumb design the over-current circuitry in the conventional
manner, then add the R
TH2
/C
TH
network to allow for lamp
start-up. Let R
TH2
= (R
TH1
÷
10)
–
1k
, and choose a capaci-
tor that provides the desired time constant working against
R
TH2
and the internal 1k
resistor.
When the MIC5013 is turned off, the threshold pin (2)
appears as an open circuit, and C
TH
is discharged through
R
TH1
and R
TH2
. This is much slower than the turn-on time
constant, and it simulates the thermal response of the
filament. If the lamp is pulse-width modulated, the current
limit will be reduced by the residual charge left in C
TH
.
Modifying Switching Times
. Do not add external capaci-
tors to the gate to slow down the switching time. Add a
resistor (1k
to 51k
) in series with the gate of the MOS-
FET to achieve this result.
Bootstrapped High-Side Driver
(Figure 6). The speed of
a high-side driver can be increased to better than 10
μ
s by
bootstrapping the supply off of the MOSFET source. This
topology can be used where the load is pulse-width modu-
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
12V
IRCZ44
10μF
43
R1
3.9k
Figure 5. Time-Variable
Trip Threshold
Control Input
+
#6014
22k
R
TH1
C
TH
22μF
1k
R
TH2
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
IRF540
10μF
20k
Figure 6. Bootstrapped
High-Side Driver
Control Input
+
100
R
18m
LOAD
R2
100nF
1N4001 (2)
1N5817
7 to 15V
+
V
1mA
R1=
R
TH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC5013BN | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| MIC5020 | Replaced by PTN78060W : |
| MIC5020BM | Replaced by PTN78060W : |
| MIC5020BN | Replaced by PTN78060W : |
| MIC5021 | Replaced by PTN78060W : |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5013BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013YM | 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5013YM TR | 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5013YN | 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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