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參數(shù)資料
| 型號： | MIC5013 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Protected High- or Low-Side MOSFET Driver(帶過流保護的高/低邊MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 保護高或低側(cè)MOSFET驅(qū)動器（帶過流保護的高/低邊馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MIC5013 |
MIC5013
Micrel
MIC5013
8
July 2000
Suppliers of Kelvin-sensed power resistors:
Dale Electronics, Inc., 2064 12th Ave., Columbus, NE 68601. Tel: (402) 564-3131
International Resistive Co., P.O. Box 1860, Boone, NC 28607-1860. Tel: (704) 264-8861
Kelvin, 14724 Ventura Blvd., Ste. 1003, Sherman Oaks, CA 91403-3501. Tel: (818) 990-1192
RCD Components, Inc., 520 E. Industrial Pk. Dr., Manchester, NH 03103. Tel: (603) 669-0054
Ultronix, Inc., P.O. Box 1090, Grand Junction, CO 81502. Tel: (303) 242-0810
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
IRCZ44
(S=2590,
R=11m
)
10μF
22
20k
Figure 4. Low-Side Driver with
Current-Sensing MOSFET
LOAD
Control Input
=15V
V+
+
R
TH
V
LOAD
SOURCE
KELVIN
SENSE
S
R
SR
R I
–
R =
L
V
TRIP
V
TRIP
R =
–
1000
2200
V
TRIP
For this example:
=20A (trip current)
I
L
=100mV
V
TRIP
Applications Information
(Continued)
supply should be limited to 15V in low-side topologies;
otherwise, a large current will be forced through the gate
clamp zener.
Low-side drivers constructed with the MIC501X family are
also fast; the MOSFET gate is driven to near supply
immediately when commanded ON. Typical circuits achieve
10V enhancement in 10
μ
s or less on a 12 to 15V supply.
High-Side Driver with Current Shunt
(Figure 3). The
comparator input pins (source and sense) float with the
current sensing resistor (R
S
) on top of the load. R1 and R2
add a small, additional potential to V
TRIP
to prevent false-
triggering of the over-current shutdown circuit with open or
inductive loads. R1 is sized for a current flow of 1mA, while
R2 contributes a drop of 100mV. The shunt voltage should
be 200 to 500mV at the trip point. The example of Figure 3
gives a 10A trip current when the output is near supply. The
trip point is somewhat reduced when the output is at ground
as the voltage drop across R1 (and therefore R2) is zero.
High-side drivers implemented with MIC5013 drivers are
self-protected against inductive switching transients. Dur-
ing turn-off an inductive load will force the MOSFET source
5V or more below ground, while the driver holds the gate at
ground potential. The MOSFET is forced into conduction,
and it dissipates the energy stored in the load inductance.
The MIC5013 source and sense pins (3 and 4) are designed
to withstand this negative excursion without damage. Exter-
nal clamp diodes are unnecessary.
Current Shunts (R
S
). Low-valued resistors are necessary
for use at R
S
.Values for R
S
range from 5 to 50m
, at 2 to
10W. Worthy of special mention are Kelvin-sensed,
“
four-
terminal
”
units supplied by a number of manufacturers
(see next page). Kelvin-sensed resistors eliminate errors
caused by lead and terminal resistances, and simplify
product assembly. 10% tolerance is normally adequate,
and with shunt potentials of 200mV thermocouple effects
are insignificant. Temperature coefficient is important; a
linear, 500 ppm/
°
C change will contribute as much as 10%
shift in the over-current trip point. Most power resistors
designed for current shunt service drift less than 100 ppm/
°
C.
Low-Side Driver with Current Sensing MOSFET
(Figure
4). Several manufacturers now supply power MOSFETs in
which a small sampling of the total load current is diverted
to a
“
sense
”
pin. One additional pin, called
“
Kelvin source,
”
is included to eliminate the effects of resistance in the
source bond wires. Current-sensing MOSFETs are speci-
fied with a sensing ratio
“
S
”
which describes the relationship
between the on-resistance of the sense connection and the
body resistance
“
R
”
of the main source pin. Current sensing
MOSFETs eliminate the current shunt required by standard
MOSFETs.
The design equations for a low-side driver using a current
sensing MOSFET are shown in Figure 4.
“
S
”
is specified on
the MOSFET
’
s datasheet, and
“
R
”
must be measured or
estimated. V
TRIP
must be less than R
×
I
L
, or else R
S
will
become negative. Substituting a MOSFET with higher on-
resistance, or reducing V
TRIP
fixes this problem. V
TRIP
=
100 to 200mV is suggested. Although the load supply is
limited only by MOSFET ratings, the MIC5013 supply
should be limited to 15V to prevent damage to the gate
clamp zener. Output clamping is necessary for inductive
loads.
“
R
”
is the body resistance of the MOSFET, excluding bond
resistances. R
DS(ON)
as specified on MOSFET data sheets
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| MIC5013BN | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| MIC5020 | Replaced by PTN78060W : |
| MIC5020BM | Replaced by PTN78060W : |
| MIC5020BN | Replaced by PTN78060W : |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5013_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Protected High- or Low-Side MOSFET Driver |
| MIC5013BM | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013YM | 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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