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參數(shù)資料
| 型號： | MIC5011BN |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Minimum Parts High- or Low-Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MIC5011BN |
July 2000
3
MIC5011
MIC5011
Electrical Characteristics
(Note 3) Test circuit. T
A
=
–
55
°
C to +125
°
C, V
+
= 15V
, all switches open, unless
otherwise specified.
Micrel
Parameter
Conditions
V
+
= 32V
Min
Typical
Max
Units
Supply Current, I
1
V
IN
= 0V, S2 closed
V
IN
= V
+
= 32V
V
IN
= 5V, S2 closed
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
0.1
10
μ
A
8
20
mA
V
+
= 5V
1.6
4
mA
Logic Input Voltage
V
+
= 4.75V
2
V
4.5
V
V
+
= 15V
V
+
= 32V
5.0
V
Logic Input Current, I
2
–
1
μ
A
1
μ
A
Input Capacitance
Pin 2
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 4.75V, I
GATE
= 0, V
IN
= 4.5V
V
+
= 15V, I
GATE
= 100
μ
A, V
IN
= 5V
V
+
= 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
7
10
V
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
24
27
V
Zener Clamp,
11
12.5
15
V
V
GATE
–
V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
11
13
16
V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
25
50
μ
s
Gate Turn-off Time, t
OFF
4
10
μ
s
Note 1
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings
.
The MIC5011 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster
—
see
Applications Information
. Maximum value of switching speed seen at 125
°
C, units operated at room temperature will reflect the typical
values shown.
Note 2
Note 3
Note 4
Input
Source
Gate
1
2
3
4
8
MIC5011
V+
7
6
5
Gnd
C1
Com
C2
V+
+1μF
VS
S2
1nF
I5
S1
1nF
1nF
500
1W
V
IN
V
GATE
Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5011YM | 功能描述:功率驅(qū)動(dòng)器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5011YM TR | 功能描述:功率驅(qū)動(dòng)器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5011YMTR | 制造商:Micrel Inc 功能描述: |
| MIC5011YN | 功能描述:功率驅(qū)動(dòng)器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5012 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
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