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參數(shù)資料
| 型號(hào)： | MIC5011BM |
| 廠商： | MICREL INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Minimum Parts High- or Low-Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 121K |
| 代理商： | MIC5011BM |
MIC5011
Micrel
MIC5011
6
July 2000
C
0
50
100
150
200
250
0
5
10
15
20
25
30
SUPPLY VOLTAGE (V)
Charge Pump
Output Current
VGATE
+
GATE
+
VS=V
–
5V
+
C
0
5
10
15
20
25
30
SUPPLY VOLTAGE (V)
Charge Pump
Output Current
VGATE
+
0
0.2
0.4
0.6
0.8
1.0
VGATE
+
VS=V
–
5V
+
C2=1 nF
Block Diagram
CHARGE
PUMP
LOGIC
MIC5011
Ground
4
6
7
8
500
C1 Com C2
1
V+
5 Gate
3 Source
2
Input
12.5V
Applications Information
Functional Description (Refer to Block Diagram)
The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the gate
of the power MOSFET is also held low through 500
to an
N-channel switch. When the input is taken above the turn-
on threshold (3.5V typical), the N-channel switch turns off
and the charge pump is turned on to charge the gate of the
power FET.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60
μ
s typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25
μ
s typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
pin 5 and source pin 3 to prevent exceeding the V
GS
rating
of the MOSFET at high supplies.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5011BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類(lèi)型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱(chēng):*IR2127 |
| MIC5011BN | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8-DIP RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類(lèi)型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱(chēng):*IR2127 |
| MIC5011YM | 功能描述:功率驅(qū)動(dòng)器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5011YM TR | 功能描述:功率驅(qū)動(dòng)器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5011YMTR | 制造商:Micrel Inc 功能描述: |
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