參數(shù)資料
型號: MIC5011
廠商: Micrel Semiconductor,Inc.
英文描述: Minimum Parts High- or Low-Side MOSFET Driver(高/低邊MOS場效應(yīng)管驅(qū)動器)
中文描述: 最小零件高或低側(cè)MOSFET驅(qū)動器(高/低邊馬鞍山場效應(yīng)管驅(qū)動器)
文件頁數(shù): 3/12頁
文件大?。?/td> 121K
代理商: MIC5011
July 2000
3
MIC5011
MIC5011
Electrical Characteristics
(Note 3) Test circuit. T
A
=
55
°
C to +125
°
C, V
+
= 15V
, all switches open, unless
otherwise specified.
Micrel
Parameter
Conditions
V
+
= 32V
Min
Typical
Max
Units
Supply Current, I
1
V
IN
= 0V, S2 closed
V
IN
= V
+
= 32V
V
IN
= 5V, S2 closed
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
0.1
10
μ
A
8
20
mA
V
+
= 5V
1.6
4
mA
Logic Input Voltage
V
+
= 4.75V
2
V
4.5
V
V
+
= 15V
V
+
= 32V
5.0
V
Logic Input Current, I
2
1
μ
A
1
μ
A
Input Capacitance
Pin 2
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 4.75V, I
GATE
= 0, V
IN
= 4.5V
V
+
= 15V, I
GATE
= 100
μ
A, V
IN
= 5V
V
+
= 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
7
10
V
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
24
27
V
Zener Clamp,
11
12.5
15
V
V
GATE
V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
11
13
16
V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
25
50
μ
s
Gate Turn-off Time, t
OFF
4
10
μ
s
Note 1
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings
.
The MIC5011 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster
see
Applications Information
. Maximum value of switching speed seen at 125
°
C, units operated at room temperature will reflect the typical
values shown.
Note 2
Note 3
Note 4
Input
Source
Gate
1
2
3
4
8
MIC5011
V+
7
6
5
Gnd
C1
Com
C2
V+
+1μF
VS
S2
1nF
I5
S1
1nF
1nF
500
1W
V
IN
V
GATE
Test Circuit
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MIC5011_05 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver
MIC5011BM 功能描述:IC DRIVER MIN PARTS HI/LO 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5011BM TR 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5011BN 功能描述:IC DRIVER MOSF HI/LOW SIDE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5011YM 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube