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參數(shù)資料
| 型號(hào)： | MIC5010 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Full-Featured High- or Low-Side MOSFET Driver |
| 中文描述： | 全功能高或低側(cè)MOSFET驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 16/16頁 |
| 文件大小： | 189K |
| 代理商： | MIC5010 |
MIC5010
Micrel
5-102
April 1998
V
+
C1
C2
COM
500
12.5V
G
S
125pF
125pF
100 kHz
OSCILLATOR
OFF
ON
GATE CLAMP
ZENER
Figure 14. Gate Control
Circuit Detail
Q1
Q2
Q3
Q4
Q5
Q6
C1
C2
Applications Information
(Continued)
Gate Control Circuit
When applying the MIC5010, it is helpful to understand the
operation of the gate control circuitry (see Figure 14). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).
When the MIC5010 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G) at
ground potential which effectively turns the external MOS-
FET off.
Q6 is turned off when the MIC5010 is commanded on. Q5
pulls the gate up to supply (through 2 diodes). Next, the
charge pump begins supplying current to the gate. The gate
accepts charge until the gate-source voltage reaches 12.5V
and is clamped by the zener diode.
A 2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are
ON. C1 is discharged, and C2 is charged to supply through
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns off
and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning Q2
and Q4 back on, and Q1 and Q3 off.
In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone. On
supplies of more than approximately 14V, current flows
directly from Q5 through the zener diode to ground. To
prevent excessive current flow, the MIC5010 supply should
be limited to 15V in low-side applications.
The action of Q5 makes the MIC5010 operate quickly in
low-side applications. In high-side applications Q5
precharges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low-
side drivers since the chip supply is boosted well above the
drain at turn-on.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC5010BM | Full-Featured High- or Low-Side MOSFET Driver |
| MIC5010BN | Full-Featured High- or Low-Side MOSFET Driver |
| MIC5013 | Protected High- or Low-Side MOSFET Driver(帶過流保護(hù)的高/低邊MOS場效應(yīng)管驅(qū)動(dòng)器) |
| MIC5013BM | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| MIC5013BN | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5010BM | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Full-Featured High- or Low-Side MOSFET Driver |
| MIC5010BN | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Full-Featured High- or Low-Side MOSFET Driver |
| MIC5011 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011BM | 功能描述:IC DRIVER MIN PARTS HI/LO 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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