參數(shù)資料
型號: MIC2595R-2BM TR
廠商: Micrel Inc
文件頁數(shù): 20/29頁
文件大?。?/td> 4205K
描述: IC CTRLR HOT SWAP NEG HV 14-SOIC
標準包裝: 2,500
類型: 熱交換控制器
應(yīng)用: 通用
內(nèi)部開關(guān):
電源電壓: -19 V ~ -80 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOIC
包裝: 帶卷 (TR)
其它名稱: MIC2595R-2BMTR
MIC2595R-2BMTR-ND
Micrel
MIC2589/MIC2595
 
 
December 2005 
20
M9999-120505
 (408) 955-1690
 
Application Information
Optional External Circuits for Added
Protection/Performance
In many telecom applications, it is very common for
circuit boards to encounter large-scale supply-voltage
transients   in   backplane   environments.   Because
backplanes    present    a    complex    impedance
environment, these transients can be as high as 2.5
times steady-state levels, or 120V in worst-case
situations. In addition, a sudden load dump anywhere
on the circuit card can generate a very high voltage
spike at the drain of the output MOSFET that will
appear at the DRAIN pin of the MIC2589/MIC2595. In
both cases, it is good engineering practice to include
protective measures to avoid damaging sensitive ICs
or the hot swap controller from these large-scale
transients. Two typical scenarios in which large-scale
transients occur are described below:
1. An output current load dump with no bypass
(charge bucket or bulk) capacitance to V
EE
.
For example, if L
LOAD
 = 5礖, V
IN
 = 56V and
t
OFF
 = 0.7祍, the resulting peak short-circuit
current prior to the MOSFET turning off
would reach:
 
 
(
)
A
V
8
.
7
5
7
.
0
56
=
?/DIV>
 
   If there is no other path for this current to
take when the MOSFET turns off, it will
avalanche the drain-source junction of the
MOSFET.    Since    the    total    energy
represented   is   small   relative   to   the
sturdiness of modern power MOSFETs, its
unlikely that this will damage the transistor.
However, the actual avalanche voltage is
unknown; all that can be guaranteed is that
it     will     be     greater     than     the
V
BD(D-S)
  of the MOSFET. The drain of the
transistor is connected to the DRAIN pin of
the MIC2589/MIC2595, and the resulting
transient does have enough voltage and
energy to damage this, or any, high-voltage
hot swap controller.
2. If   the   loads   bypass   capacitance   (for
example, the input filter capacitors for DC-
DC converter module(s)) is on a board from
which the board with the MIC2589/MIC2595
and the MOSFET can be unplugged, the
same type of inductive transient damage
can occur to the MIC2589/MIC2595.
For many applications, the use of additional circuit
components can be implemented for optimum system
performance and/or protection. The circuit, shown in
Figure 7, includes several components to address
some the following system (dynamic) responses
and/or functions: 1) suppression of transient voltage
spikes, 2) elimination of false tripping of the circuit
breaker due to undervoltage and overcurrent glitches,
and 3) the implementation of an external reset circuit.
It is not mandatory that these techniques be utilized,
however, the application environment will dictate
suitability. For protection against sudden on-card load
dumps at the DRAIN pin of the MIC2589/MIC2595
controller, a 68V, 1W, 5% Zener diode clamp (D2)
connected from the DRAIN to the VEE of the
controller can be implemented as shown. To protect
the controller from large-scale transients at the card
input,   a   100V   clamp   diode   (D1,   SMAT70A   or
equivalent) can be used. In either case, very short
lead lengths and compact layout design is strongly
recommended to prevent unwanted transients in the
protection circuitry. Power buss inductance often
produces   localized   (plug-in   card)   high-voltage
transients during a turn-off event. Managing these
repeated voltage stresses with sufficient input bulk
capacitance   and/or   transient   suppressing   diode
clamps is highly recommended for maximizing the life
of the hot swap controller(s).
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