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參數(shù)資料
| 型號(hào)： | MHW2821-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | UHF Silicon FET Power Amplifier |
| 中文描述： | 806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CASE 301AB-02, 5 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 75K |
| 代理商： | MHW2821-1 |
1
MHW2821–1 MHW2821–2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1996
The RF Line
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz.
Specified 12.5 Volt Characteristics:
RF Input Power:
≤
250 mW (MHW2821–1)
RF Input Power:
≤
300 mW (MHW2821–2)
RF Output Power: 20 W (MHW2821–1)
RF Output Power:
18 W (MHW2821–2)
LDMOS FET Technology
Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
50
Input/Output Impedance
Guaranteed Stability and Ruggedness
Cost Effective
MAXIMUM RATINGS
(Flange Temperature = 25
°
C)
Rating
Symbol
Value
Unit
DC Supply Voltages
Vbias,
VS2, VS3
12.5
16
Vdc
RF Input Power
Pin
Pout
TC
400
mW
RF Output Power
23
W
Operating Case Temperature Range
– 30 to +100
°
C
Storage Temperature Range
Tstg
– 30 to +100
°
C
ELECTRICAL CHARACTERISTICS
(VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = +25
°
C, 50
system, unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Frequency Range
MHW2821–1
MHW2821–2
BW
806
890
870
950
MHz
Input Power (Pout = 20 W) (1)
Input Power
(Pout = 18 W) (1)
MHW2821–1
MHW2821–2
Pin
—
—
250
300
mW
Power Gain (Pout = 20 W) (1)
Power Gain
(Pout = 18 W) (1)
MHW2821–1
MHW2821–2
GP
19
17.9
—
—
dB
Efficiency (Rated Pout)
Harmonics (Rated Pout Reference) (1)
η
35
—
%
2fo
3fo
—
—
– 40
– 45
dBc
Input VSWR (Rated Pout) (1)
VSWRin
—
3:1
dB
(1) Adjust Pin for specified Pout.
(continued)
Order this document
by MHW2821/D
SEMICONDUCTOR TECHNICAL DATA
–1: 20 W, 806–870 MHz
–2: 18 W, 890–950 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
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