- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄359165 > MHVIC915NR2 (飛思卡爾半導(dǎo)體(中國(guó))有限公司) RF LDMOS Wideband Integrated Power Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | MHVIC915NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 506K |
| 代理商： | MHVIC915NR2 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
2
RF Device Data
Freescale Semiconductor
MHVIC915NR2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Storage Temperature Range
T
stg
-65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 0.2 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
Output Application
(P
out
= 2.5 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
GSM Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ
= 50 mA
Stage 2, 26 Vdc, I
DQ
= 140 mA
R
θ
JC
15.1
5.1
15.8
5.0
13.8
4.5
°
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
0 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 27 Vdc, I
DQ1
= 80 mA, I
DQ2
= 120 mA, f = 880
MHz, Single-Carrier
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @
±
750 MHz.
PAR = 9.8 dB @ 0.01% Probability
on CCDF
Power Gain (P
out
= 23 dBm)
G
ps
29
31
—
dB
Power Added Efficiency (P
out
= 34 dBm)
PAE
—
21
—
%
Input Return Loss (P
out
= 23 dBm)
IRL
—
-12
-9
dB
Adjacent Channel Power Ratio (P
out
= 23 dBm)
ACPR
—
-60
-55
dBc
Adjacent Channel Power Ratio (P
out
= 34 dBm)
ACPR
—
-50
—
dBc
Gain Flatness @ P
out
= 23 dBm (865 MHz to 895 MHz)
G
F
—
0.2
0.4
dB
Bias Sense FET Drain Current
V
BSD
= 27 V
V
BIAS
BSG
= V
BIAS2 Q2
@ I
DQ2
= 120 mA
I
BSD
0.8
1.2
1.6
mA
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MHW10186N | Gallium Arsenide CATV Amplifier Module |
| MHW10188AN | Gallium Arsenide CATV Amplifier Module |
| MHW10236N | Gallium Arsenide CATV Amplifier Module |
| MHW10247AN | Gallium Arsenide CATV Amplifier Module |
| MHW1244N | CATV Amplifier Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MHVIC915R2 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
| MHVIC915R2/D | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
| MHV-M-10 | 制造商: 功能描述: 制造商:COMPONENT ENTERPRISES 功能描述: 制造商:undefined 功能描述: |
| MHV-MHV-1A | 制造商:undefined 功能描述: |
| MHV-RPL-M-59 | 制造商:ITT Interconnect Solutions 功能描述:MHV-RPL-M-59 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。