參數(shù)資料
型號: MHVIC915
廠商: Motorola, Inc.
英文描述: 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
中文描述: 746-960兆赫射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 2/12頁
文件大?。?/td> 652K
代理商: MHVIC915
MHVIC915R2
2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 0.2 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
Output Application
(P
out
= 2.5 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
GSM Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ
= 50 mA
Stage 2, 26 Vdc, I
DQ
= 140 mA
R
θ
JC
5.07
3.73
3.41
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C4 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS
(In Motorola CDMA Test Fixture, 50
ο
hm system) V
DS
= 27 V, I
DQ1
= 80 mA, I
DQ2
= 120 mA, 880 MHz,
1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Common–Source Amplifier Power Gain (P
out
= 23 dBm)
G
ps
29
31
dB
Power Added Efficiency (P
out
= 34 dBm)
η
21
%
Input Return Loss (P
out
= 23 dBm)
IRL
–12
–9
dB
Adjacent Channel Power Ratio (P
out
= 23 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
–60
–55
dBc
Adjacent Channel Power Ratio (P
out
= 34 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
–50
dBc
Gain Flatness @ P
out
= 23 dBm (865 MHz to 895 MHz)
G
F
0.2
0.4
dB
Bias Sense FET Drain Current
V
BSD
= 27 V
V
BIAS
BSG
= V
BIAS2 Q2
@ I
DQ2
= 120 mA
I
BSD
0.8
1.2
1.6
mA
(continued)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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