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參數(shù)資料
| 型號(hào)： | MHPM7B8A120A |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 8 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-25 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | MHPM7B8A120A |
3
MHPM7B8A120A
MOTOROLA
ELECTRICAL CHARACTERISTICS
(continued)
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
IGES
ICES
–
–
±
20
μ
A
TJ = 25
°
C
TJ = 125
°
C
–
–
–
–
100
500
μ
A
μ
A
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)
Fall Time – Inductive Load
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
VGE(th)
V(BR)CES
VCE(SAT)
Cies
4.0
6.0
8.0
V
1200
1300
–
V
–
2.5
3.5
V
–
1000
–
pF
QT
tfi
–
75
–
nC
–
350
500
ns
Turn-On Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
E(on)
–
–
1.0
mJ
Turn-Off Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
E(off)
–
–
1.0
mJ
Diode Forward Voltage (IF = 8.0 A)
Diode Reverse Leakage Current
VF
IR
R
θ
JC
R
θ
JC
–
1.6
2.2
V
–
–
50
μ
A
Thermal Resistance – IGBT
–
–
2.2
°
C/W
Thermal Resistance – Diode
–
–
3.7
°
C/W
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