參數(shù)資料
型號: MHPM7A30E60DC3
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Hybrid Power Module
中文描述: 30 A, 600 V, N-CHANNEL IGBT
封裝: CASE 464D-01, POWER MODULE-24
文件頁數(shù): 2/6頁
文件大?。?/td> 167K
代理商: MHPM7A30E60DC3
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 30 A)
Gate–Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
VF
IGES
ICES
VGE(th)
V(BR)CES
VCE(sat)
VF
1.04
1.25
V
±
20
A
5.0
100
A
4.0
6.0
8.0
V
600
V
2.2
2.6
V
1.6
1.8
2.1
V
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT
RJC
RJC
RJC
1.3
1.6
°
C/W
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
1.9
2.4
°
C/W
Thermal Resistance — Input Rectifier
2.6
3.3
°
C/W
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
VF
1.983
2.024
2.066
V
TCVF
–8.64
mV/
°
C
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