
2
Motorola IGBT Device Data
MAXIMUM DEVICE RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Junction Temperature Range
TJ
tsc
VISO
TC
Tstg
—
– 40 to +150
°
C
Short Circuit Duration (VCE = 720 V, TJ = 125
°
C)
Isolation Voltage, Pin to Baseplate
10
s
2500
Vac
Operating Case Temperature Range
– 40 to +95
°
C
Storage Temperature Range
– 40 to +150
°
C
Mounting Torque — Heat Sink Mounting Holes
1.4
Nm
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125
°
C
IGES
ICES
VGE(th)
V(BR)CES
VCE(SAT)
—
—
±
20
μ
A
—
5.0
100
μ
A
5.0
6.0
7.0
V
1200
—
—
V
1.7
—
2.35
2.69
2.9
—
V
Forward Transconductance
10A120
15A120
25A120
gfe
—
—
—
8.3
14
19
—
—
—
mho
Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125
°
C
VF
1.7
—
2.35
1.9
3.1
—
V
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz)
10A120
15A120
25A120
Cies
—
—
—
1880
2620
4770
—
—
—
pF
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120
15A120
QT
—
—
—
65
87
150
—
—
—
nC
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 25
°
C)
Recommended Gate Resistor (RG(on) = RG(off))
10A120
15A120
25A120
RG
—
—
—
82
82
68
—
—
—
Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
td(on)
—
—
—
174
240
330
—
—
—
ns
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
tr
—
—
—
84
105
150
—
—
—
ns
Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
td(off)
—
—
—
640
780
1060
—
—
—
ns
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
tf
—
—
—
39
48
70
47
58
84
ns
Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
Eon
—
—
—
1.5
2.7
4.6
1.8
3.3
5.6
mJ