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參數(shù)資料
| 型號： | MHPM6B20E60D3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MHPM6B20E60D3 |
2
Motorola IGBT Device Data
MAXIMUM DEVICE RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Junction Temperature Range
TJ
tsc
VISO
TC
Tstg
—
–40 to +150
°
C
Short Circuit Duration (VCE = 400 V, TJ = 125
°
C)
Isolation Voltage, pin to baseplate
10
s
2500
Vac
Operating Case Temperature Range
–40 to +95
°
C
Storage Temperature Range
–40 to +150
°
C
Mounting Torque — Heat Sink Mounting Holes
12
lb–in
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 20 A)
TJ = 125
°
C
VF
—
—
1.0
0.92
1.25
—
V
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150
°
C
IR
—
—
50
3000
—
—
A
Gate–Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125
°
C
IGES
ICES
VGE(th)
V(BR)CES
VCE(SAT)
—
—
±
50
A
—
5.0
100
A
4.0
6.0
8.0
V
600
—
—
V
—
—
2.2
2.5
2.6
—
V
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125
°
C
VF
—
—
2.0
1.8
2.3
—
V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Cies
—
TBD
—
pF
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT
RJC
RJC
RJC
—
1.8
2.2
°
C/W
Thermal Resistance — Free–Wheeling Diode
—
2.6
3.3
°
C/W
Thermal Resistance — Input Rectifier
—
3.4
4.2
°
C/W
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