參數(shù)資料
型號: MHPM6B10N120SL
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Hybrid Power Module
中文描述: 15 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù): 5/10頁
文件大小: 265K
代理商: MHPM6B10N120SL
5
Motorola IGBT Device Data
TYPICAL CHARACTERISTICS
(see also application information)
Figure 7. Inductive Switching Times versus
Collector Current
Figure 8. Inductive Switching Times versus
Gate Resistance
Figure 9. Turn–On and Turn–Off Energy
Losses versus Collector Current
Figure 10. Turn–On and Turn–Off Energy
Losses versus Gate Resistance
Figure 11. Reverse Recovery Characteristics
— Free–Wheeling Diode
Figure 12. Capacitance Variation
40
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
10
1.0
5.0
10
15
20
25
C
30
35
100
Ciss
Coss
Crss
C
IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
0
100
10
1.0
0.1
0.2
0.4
1.2
0.6
0.8
trr
Irr
1.0
V = 600 V
I
t
(
3.0
0
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
3.0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
2.5
2.0
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
1.0
0
1.0
0.5
0
0.2
0.4
0.6
0.8
1.5
2.0
2.5
2.0
1.2
1.4
1.6
1.8
2.5
0
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
6.0
1.0
0
1.0
0.5
1.5
2.0
3.0
2.0
3.0
4.0
5.0
tr
td(on)
0.2
0.6
0
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
2.5
2.0
1.5
1.0
0.5
0
0.4
1.4
2.0
1.6
0.8
1.2
1.0
1.8
td(on)
tr
t
)
r
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
2.2
t
VCE = 600 V
VGE = 15 V
IC = ICmax
E
,
o
,
o
E
2.2
Eon, TJ = 125
°
C
Eon, TJ = 25
°
C
Eoff, TJ = 25
°
C
Eoff, TJ = 125
°
C
E
,
o
,
o
E
Eon, TJ = 125
°
C
Eon, TJ = 25
°
C
Eoff, TJ = 25
°
C
Eoff, TJ = 125
°
C
1.4
2.2
1.6
1.8
2.0
TJ = 125
°
C
25
°
C
TJ = 125
°
C
25
°
C
TJ = 125
°
C
25
°
C
TJ = 125
°
C
25
°
C
TJ = 125
°
C
25
°
C
TJ = 125
°
C
25
°
C
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
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