參數(shù)資料
型號: MHPA19010
廠商: MOTOROLA INC
元件分類: 衰減器
英文描述: SEE A3245EUA-T
中文描述: 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: CASE 301AP-02, 4 PIN
文件頁數(shù): 1/4頁
文件大小: 323K
代理商: MHPA19010
1
MHPA19010
Motorola, Inc. 2003
The RF Line
Designed for Class AB amplifier applications in
50 ohm system
s operating in
the PCS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems, such as TDMA and CDMA.
Typical CDMA Performance: 1960 MHz, 28 Volts
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Adjacent Channel Power: –51 dBc @ 30 dBm, 885 kHz Channel Spacing
Power Gain: 24.5 dB Min (@ f = 1960 MHz)
Excellent Phase Linearity and Group Delay Characteristics
0.2 dB Typical Gain Flatness
Ideal for Feedforward Base Station Applications
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power (Single Carrier CW)
P
in
+20
dBm
Storage Temperature Range
T
stg
–40 to +100
°
C
Operating Case Temperature Range
T
C
–20 to +100
°
C
Quiescent Bias Current
I
DQ
750
mA
ELECTRICAL CHARACTERISTICS
(V
DD
= 28 Vdc, V
BIAS
8 V Set for Supply Current of 600 mA, T
C
= 25
°
C, 50
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
600
mA
Power Gain
(f = 1960 MHz)
G
p
24.5
25
dB
Gain Flatness
(f = 1930–1990 MHz)
G
F
0.2
0.5
dB
Power Output @ 1 dB Comp.
(f = 1960 MHz)
P1dB
41.5
dBm
Input VSWR
(f = 1930–1990 MHz)
VSWR
in
1.5:1
2:1
Noise Figure
(f = 1960 MHz)
NF
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW,
885 kHz Channel Spacing
ACPR
–58
–51
dBc
Order this document
by MHPA19010/D
SEMICONDUCTOR TECHNICAL DATA
1930–1990 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP–02, STYLE 3
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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