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參數(shù)資料
| 型號： | MH32V7245BST-5 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM |
| 中文描述： | 超頁模式2415919104 -位（33554432 - Word的72 -位）動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MH32V7245BST-5 |
MITSUBISHI LSIs
MH32V7245BST -5, -6
Preliminary Spec.
MITSUBISHI
ELECTRIC
13/JUL./1998
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
MIT - DS - 0218-0.0
Read and Refresh Cycles
Limits
Parameter
Symbol
Unit
-6
(Note 22)
(Note 22)
Write Cycle (Early Write and Delayed Write)
10000
10000
0
0
104
60
10
43
20
0
35
18
20
15
Min
Max
Limits
Parameter
Symbol
Unit
(Note 24)
10000
10000
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
15
10
-5
15
0
104
60
10
35
20
tWC
tRAS
tCAS
tCSH
tRSH
tWCS
tWCH
tCWL
tRWL
tWP
tDS
tDH
Write cycle time
/RAS iow pulse width
/CAS iow pulse width
/CAS hold time after /RAS iow
/RAS hold time after /CAS low
Write setup time before /CAS low
Write hold time after /CAS low
/CAS hold time after /W low
/RAS hold time after W low
Write pulse width
Data setup time before /CAS low or W low
Data hold time after /CAS low or W low
-6
Min
Max
Note 22: Either tRCH or tRRH must be satisfied for a read cycle.
tRC
tRAS
tCAS
tCSH
tRSH
tRCS
tRCH
tRRH
tRAL
tCAL
tORH
tOCH
Read cycle time
/RAS iow pulse width
/CAS iow pulse width
/CAS hold time after /RAS iow
/RAS hold time after /CAS iow
Read Setup time after /CAS high
Read hold time after /CAS iow
Read hold time after /RAS iow
Column address to /RAS hold time
Column address to /CAS hold time
/RAS hold time after /OE iow
/CAS hold time after /OE iow
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read-Write and Read-Modify-Write Cycles
Limits
Parameter
Symbol
Unit
Min
133
89
Max
-6
(Note23)
(Note24)
(Note24)
(Note24)
Read write/read modify write cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Read setup time before /CAS low
Delay time, /CAS low to /W low
Delay time, /RAS low to /W low
Delay time, address to /W low
OE hold time after W low
tRWC
tRAS
tCAS
tCSH
tRSH
tRCS
tCWD
tRWD
tAWD
tOEH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10000
10000
49
0
32
72
47
15
44
77
Note 23: tRWC is specified as tRWC(min)=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT.
24:tWCS, tCWD,tRWD ,tAWD and,tCPWD are specified as reference points only. If tWCS tWCS(min) the cycle is an early write cycle and the DQ pins will remain
high impedance throughout the entire cycle. If tCWD tCWD(min), tRWD tRWD (min), tAWD tAWD(min) and tCPWD tCPWD(min) (for Fast page mode cycle
only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the
DQ (at access time and until /CAS or /OE goes back to VIH) is indeteminate.
7
-5
10000
10000
0
0
84
50
8
30
18
0
30
13
18
13
Min
Max
10000
10000
8
8
0
84
50
8
30
18
13
8
-5
13
-5
Min
Max
Min
109
75
Max
-5
10000
10000
43
0
28
60
40
13
38
65
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| MH32V7245BST-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM |
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