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參數(shù)資料
| 型號： | MGV125-21-H20 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | KA BAND, 0.88 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 612K |
| 代理商： | MGV125-21-H20 |
Revision Date: 11/14/05
GaAs Hyperabrupt Varactor Diodes
MGV Series
Description
The MGV series of hyperabrupt varactor diodes feature
passivated mesa construction for low leakage and excellent post
tuning drift. Available in three constant gamma families of 0.75,
1.0 and 1.25. These diodes will nd application in tunable lters
and oscillators up to 40 GHz. Optimum performance is obtained
using die however packaged devices are available as well
diodes screened per MIL-PRF-19500 and MIL-PRF-38534.
Features
0 to 22 Volt tuning voltage
Tuning ratios up to 10 (typical)
Three constant gamma families -
0.75, 1.0, and 1.25
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
22 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X, & 0805-2
H20, P55 & P55
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X, & 0805-2
H20, P55 & P55
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
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| MGV125-25-P55 | KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MGV125-26-P55 | KA BAND, 2.13 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
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