參數資料
型號: MGSF3455XT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1450 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, CASE318G-02, TSOP-6
文件頁數: 1/4頁
文件大?。?/td> 134K
代理商: MGSF3455XT1
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MGSF3455XT1/D
MGSF3455XT1
Preliminary Information
Low rDS(on) SmallSignal
MOSFETs TMOS Single
PChannel Field Effect
Transistors
Part of the GreenLineE Portfolio of devices with
energyconserving traits.
These miniature surface mount MOSFETs utilize
Motorola’s High Cell Density, HDTMOS process. Low
rDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in small power management
circuitry. Typical applications are dcdc converters, power
management in portable and batterypowered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
GatetoSource Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 255C
Drain Current — Pulsed Drain Current (tp 3 10 ms)
ID
IDM
1.45
10
A
Total Power Dissipation @ TA = 255C
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Thermal Resistance — JunctiontoAmbient
RθJA
300
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3455XT1
7″
8 mm embossed tape
3000
MGSF3455XT3
13″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
http://onsemi.com
PCHANNEL
ENHANCEMENTMODE
TMOS MOSFET
rDS(on) = 80 mΩ (TYP)
CASE 318G02, Style 1
TSOP 6 PLASTIC
D
G
D
S
DRAIN
3
GATE
SOURCE
4
6
5
2
1
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