參數(shù)資料
型號: MGSF3454VT1
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TSOP-6
文件頁數(shù): 8/13頁
文件大小: 167K
代理商: MGSF3454VT1
MGSF3454VT1
http://onsemi.com
352
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source Voltage
Figure 9. Threshold Voltage
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
IMPEDANCE
Square Wave Pulse Duration (sec)
2
0.1
0.01
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
TJ, TEMPERATURE (°C)
25
50
75
100
125
ID = 250 A
150
-0.8
0.4
0.2
0.0
-0.2
-0.4
-0.6
0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
I S
,SOURCE
CURRENT
(A)
1
10
40
TJ = 150°C
0
0.25
0.50
0.75
1.00
1.25
1.5
1.75
02
4
6
8
10
0
0.04
0.08
0.12
R DS(on)
,ON-RESIST
ANCE
(OHMS)
VGS - GATE-TO-SOURCE VOLTAGE (V)
0.16
0.20
ID = 4.2 A
0.01
0.10
1.00
10.00
0
6
12
18
POWER
(W)
TIME (sec)
24
30
TJ = 25°C
-25
-50
V
,V
ARIANCE
(V)
GS(th)
1
0.2
Duty Cycle = 0.5
0.05
SINGLE PULSE
0.1
0.02
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
相關(guān)PDF資料
PDF描述
MGSF3454V 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
MGSF3454XT1 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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