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參數(shù)資料
| 型號： | MGSF2N02ELT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| 中文描述： | 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 54K |
| 代理商： | MGSF2N02ELT3G |
MGSF2N02EL
http://onsemi.com
3
0
2
4
6
8
0
0.5
1
1.5
2
2.5
V
GS
= 3 V
V
GS
= 2.2 V
V
GS
= 2.0 V
V
GS
= 1.8 V
V
GS
= 1.6 V
T
J
= 25
°
C
V
GS
= 2.6 V
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 5 V
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
T
J
= 55
°
C
T
J
= 100
°
C
V
DS
10 V
0.02
0.04
0.06
0.08
0.10
0.12
0
2
4
6
8
T
J
= 25
°
C
0
0.1
0.2
0.3
4
5
6
7
8
T
J
= 25
°
C
V
GS
= 2.5 V
0.6
0.9
1.2
1.5
1.8
50
25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5. OnResistance Variation with Temperature
I
D
= 3.6 A
V
GS
= 4.5 V
10
100
1000
10000
4
8
12
16
20
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 100
°
C
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance vs. GatetoSource Voltage
Figure 4. OnResistance vs. Gate Voltage
Figure 6. DraintoSource Leakage
Current vs. Voltage
I
D
,
I
D
,
R
D
,
R
R
D
,
R
I
D
= 3.6 A
R
D
,
R
I
D
,
V
DS
, DRAINTOSOURCE VOLTAGE (V)
V
GS
, GATETOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENTS (AMPS)
V
GS
, GATETOSOURCE VOLTAGE (V)
V
DS
, DRAINTOSOURCE VOLTAGE (V)
V
GS
= 1.2 V
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