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參數(shù)資料
| 型號： | MGSF2N02ELT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| 中文描述： | 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MGSF2N02ELT3 |
MGSF2N02EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 10 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
22
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
Adc
GateSource Leakage Current (V
GS
=
8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nA
ON CHARACTERISTICS
(Note 3)
GateSource Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
0.5
2.3
1.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(V
GS
= 4.5 Vdc, I
D
= 3.6 A)
(V
GS
= 2.5 Vdc, I
D
= 3.1 A)
R
DS(on)
78
105
85
115
m
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
5 0 Vd
C
iss
150
pF
Output Capacitance
C
oss
130
Transfer Capacitance
C
rss
45
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
6.0
ns
Rise Time
= 16
= 2.8 Adc,
(V
DD
16
Vdc, I
D
2.8 Adc,
V
gs
= 4.5 V, R
G
= 2.3 )
t
r
95
TurnOff Delay Time
t
d(off)
28
Fall Time
t
f
125
Gate Charge
(V
DS
= 16 Vd
Vdc, I
D
= 1.75 Adc,
V
GS
= 4.0 Vdc) (Note 3)
1 75 Ad
Q
T
3.5
nC
Q
gs
0.6
Q
gd
1.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward Voltage
(I
S
= 1.0 Adc, V
GS
= 0 Vdc) (Note 3)
V
SD
0.76
1.2
V
Reverse Recovery Time
t
rr
104
ns
(I
S
= 1.0 Adc, V
GS
= 0 Vdc,
/ dt = 100 A/ s) (Note 3)
dl
S
t
a
42
t
b
62
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
Q
RR
0.20
C
ORDERING INFORMATION
Device
Package
Shipping
MGSF2N02ELT1
SOT23
3,000 Tape & Reel
MGSF2N02ELT1G
SOT23
(PbFree)
3,000 Tape & Reel
MGSF2N02ELT3
SOT23
10,000 Tape & Reel
MGSF2N02ELT3G
SOT23
(PbFree)
10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF2N02ELT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2P02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts |
| MGSF2P02HDT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 2.9A 6-Pin TSOP T/R |
| MGSF2P02HDT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts |
| MGSF3433VT1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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