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參數(shù)資料
| 型號(hào)： | MGSF2N02ELT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| 中文描述： | 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | MGSF2N02ELT1G |
MGSF2N02EL
http://onsemi.com
4
C
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
0
50
100
150
200
250
300
350
0
4
8
12
16
20
T
J
= 25
°
C
Ciss
Coss
Crss
Qg, TOTAL GATE CHARGE, (nC)
Figure 8. GatetoSource Voltage vs. Total Charge
0
1
2
3
4
5
0
1
2
3
I
D
= 3.6 A
T
J
= 25
°
C
QT
Q2
Q1
t
1
10
100
1000
1
10
100
V
DD
= 16 V
I
D
= 2.8 A
V
GS
= 4.5 V
t
d(on)
t
d(off)
t
r
t
f
0
0.3
0.6
0.9
1.2
1.5
1.8
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
V
GS
= 4.5 V
T
J
= 25
°
C
V
G
,
I
S
,
R
G
, GATE RESISTANCE ( )
V
SD
, SOURCETODRAIN VOLTAGE (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF2N02ELT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MGSF2N02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2P02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts |
| MGSF2P02HDT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 2.9A 6-Pin TSOP T/R |
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