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參數資料
| 型號： | MGSF1P02ELT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MGSF1P02ELT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLine
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 8.0
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
750
2000
mA
Total Power Dissipation @ TA = 25°C
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
300
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Device Marking: PC
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF1P02ELT1
7
″
8mm embossed tape
3000
MGSF1P02ELT3
13
″
8mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGSF1P02ELT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3 DRAIN
1
GATE
2 SOURCE
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MGSF1P02ELT1
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
Motorola Preferred Device
1
2
3
Motorola, Inc. 1998
REV 1
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| MGSF3441XT1 | 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGSF1P02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT1 | 功能描述:MOSFET P-CH 20V 750MA SOT-23 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MGSF1P02LT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 0.75A 3-Pin SOT-23 T/R |
| MGSF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02EL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
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