參數(shù)資料
型號: MGS13002D
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 0.5 A, 600 V, N-CHANNEL IGBT, TO-226AE
文件頁數(shù): 3/6頁
文件大?。?/td> 135K
代理商: MGS13002D
3
Motorola Power Products Division Technical Data
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
Figure 3. Saturation Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
Figure 5. Diode Forward Voltage
Figure 6. Diode Forward Voltage versus Case
Temperature
1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
6.0
0
1.5
0.5
0
TC, CASE TEMPERATURE (
°
C)
0
–25
2.0
1.8
1.7
1.6
1.5
1.4
25
0.5
1.5
0
IF, COLLECTOR CURRENT (AMPS)
22
12
7.0
2.0
TC, CASE TEMPERATURE (
°
C)
50
125
10
8.0
6.0
2.0
0
100
1.0
I
V
0.5
0
2.0
3.0
1.0
2.0
3.0
4.0
5.0
1.0
2.0
2.5
50
75
100
125
150
,
V
2.0
17
25
75
150
4.0
V
4.0
I
1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
I
0.5
0
2.0
3.0
4.0
1.9
TC = 25
°
C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = 150
°
C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = –20
°
C
VGE = 15 V
12.5 V
10 V
8.0 V
IC = 700 m
VG = 15 V
IC = 500 mA
IC = 300 mA
TC = 150
°
C
–20
°
C
25
°
C
IC = 500 m
IC = 300 mA
IC = 100 mA
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