參數(shù)資料
型號： MGRB1018
廠商： MOTOROLA INC
元件分類： 參考電壓二極管
英文描述： Power Manager Gallium Arsenide Power Rectifier
中文描述： 10 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE
文件頁數(shù)： 1/6頁
文件大?。?/td> 153K
代理商： MGRB1018
1
Motorola RF Device Data
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity
protection diodes, these state-of-the-art devices have the following features:
Planar Epitaxial Construction
Nitride Passivation for Stable Blocking Characteristics
Monolithic Dual Die Available (MGRB2018CT)
Epoxy Meets UL94, VO @ 1/8
″
Hyperfast and Soft Reverse Recovery Over Specified Temperature
Range (15 ns)
Mechanical Characteristics
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
Lead Temperature for Soldering Purposes: 260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Available in 24mm Tape and Reel, 800 units per reel by adding a T4
suffix to the part number
Marking: MGRB1018
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
IDC
180
V
DC Forward Current
(TC = 110
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 85
°
C)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
10
A
IFRM
20
A
IFSM
60
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
–55 to 175
°
C
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
– Junction to Ambient
R
θ
JC
R
θ
JA
4.3
53
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 5 A)
VF
TJ=25
°
C
1.4
1.1
TJ=125
°
C
1.5
1.1
V
(IF = 10 A)
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 90 V)
IR
TJ=25
°
C
25
1
TJ=125
°
C
685
120
μ
A
(VR = 180 V)
Typical Reverse Recovery Time (2)
(VR = 150 V, IF = 10 A, di/dt = 200 A/
μ
s)
trr
TJ=25
°
C
12.6
13
TJ=125
°
C
12.4
12.7
ns
(VR = 150 V, IF = 5 A, di/dt = 200 A/
μ
s)
Typical Peak Reverse Recovery Current
(VR = 150 V, IF = 10 A, di/dt = 200 A/
μ
s)
IRM
TJ=25
°
C
1.5
1.6
TJ=125
°
C
1.6
1.7
A
(VR = 150 V, IF = 5 A, di/dt = 200 A/
μ
s)
Note: This data sheet contains advance information only and is subject to change without notice.
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
(2) trr measured projecting from 25% of IRM to ground.
Order this document
by MGRB1018/D
SEMICONDUCTOR TECHNICAL DATA
GALLIUM ARSENIDE
RECTIFIER
10 AMPERES
180 VOLTS
CASE 418B–02
D2PAK
1
2, 4
3
1,3
2,4
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