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參數(shù)資料
| 型號(hào)： | MGP21N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | MGP21N60E |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
45
5.0
RG, GATE RESISTANCE (OHMS)
1.5
1.3
0.9
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.4
0
10
20
0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
1.2
0.4
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1.0
100
10
1.0
T
I
0.5
15
25
–25
0
25
0.8
1.6
5.0
10
100
1000
T
T
35
1.2
50
75
100
125
0.8
1.4
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 20 A
IC = 15 A
IC = 10 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 20 A
IC = 15 A
IC = 10 A
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
RGE = 20
VGE = 15 V
1.1
0.7
1.0
0.2
0.6
15
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