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參數(shù)資料
| 型號： | MGP20N40CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 133K |
| 代理商： | MGP20N40CL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC
IC
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TJ = 25
°
C
VGE = 10 V
TJ = 125
°
C
0
1
2
3
8
20
10
0
30
40
4
5
6
7
0
2
4
6
8
40
30
20
10
0
3 V
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
IC
VC
TJ, JUNCTION TEMPERATURE (
°
C)
TJ = 125
°
C
VGE = 5 V
–50
0
150
1.8
1.4
1.2
1.0
1.6
2.0
2.2
50
100
1
2
3
4
5
40
30
20
10
0
Figure 5. Capacitance Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
50
10000
1000
100
10
1.0
10
9
10
100
150
200
C
VGE = 10 V
5 V
4 V
3 V
5 V
4 V
25
°
C
VCE = 10 V
IC = 20 A
15 A
10 A
TJ = 25
°
C
VGE = 0 V
Ciss
Coss
Crss
25
75
125
175
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